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Brand Name : KeGu
Place of Origin : China
Payment Terms : L/C,D/A,D/P,T/T,Western Union,MoneyGram
Supply Ability : 2,000 pcs/month
Packaging Details : Strong wooden box for Global shipping
Model Number : Customizable
Price : 200-500 yuan/kg
Material : SiC
Composition:SiC : >98%
Color : Black
Density : >3.05g/cm3
Max. Service Temp : 1650°C
Flexural Strength : 380MPa
Overview:
Silicon Carbide (SiC) trays and plates are precision-engineered wafer carriers designed specifically for Inductively Coupled Plasma (ICP) etching processes within the LED industry. SiC stands out as a superior material due to its exceptional thermal management, outstanding corrosion resistance, and remarkable mechanical stability at extreme temperatures. These properties make our SiC trays the ideal solution for demanding semiconductor applications, ensuring process integrity and high yield.
Key Material Advantages:
Superior Thermal Conductivity: For efficient heat dissipation and uniform temperature distribution across the wafer.
Exceptional Plasma & Corrosion Resistance: Withstands harsh chemical environments and plasma shock for extended service life.
High Mechanical Strength at Elevated Temperatures: Maintains structural integrity and dimensional stability under high thermal loads.
Low Thermal Expansion: Minimizes the risk of warping or stress on wafers during thermal cycling.
Silicon Carbide (SiC) Material Properties
| Property | Value | 
|---|---|
| Compound Formula | SiC | 
| Molecular Weight | 40.1 | 
| Appearance | Black | 
| Melting Point | 2,730 °C (decomposes) | 
| Density | 3.0 - 3.2 g/cm³ | 
| Electrical Resistivity | 1 - 4 x 10¹ Ω·m | 
| Poisson’s Ratio | 0.15 - 0.21 | 
| Specific Heat | 670 - 1180 J/kg·K | 
 Comparative Specifications: SiC Tray Types
| Type | Recrystallized SiC | Sintered SiC | Reaction Bonded SiC | 
| Purity | > 99.5% | > 98% | > 88% | 
| Max. Working Temp. | 1650 °C | 1550 °C | 1300 °C | 
| Bulk Density (g/cm³) | 2.7 | 3.1 | > 3.0 | 
| Apparent Porosity | < 15% | < 2.5% | < 0.1% | 
| Flexural Strength (MPa) | 110 | 400 | 380 | 
| Compressive Strength (MPa) | > 300 | 2200 | 2100 | 
| Thermal Expansion (10⁻⁶/°C) | 4.6 (at 1200°C) | 4.0 (at <500°C) | 4.4 (at <500°C) | 
| Thermal Conductivity (W/m·K) | 35 - 36 | 110 | 65 | 
| Primary Characteristics | High-Temperature Resistance, High Purity | High Fracture Toughness | Excellent Chemical Resistance | 
Critical Features for ICP Etching:
Excellent Thermal Conductivity: Ensures rapid heat transfer and minimizes thermal gradients.
Superior Resistance to Plasma Shock: Guarantees long-term durability and process consistency.
Excellent Temperature Uniformity: Critical for achieving uniform etch rates and high device performance across the entire wafer.
Primary Applications:
Semiconductor Processing: Ideal as wafer carriers, susceptors, and process fixtures in CVD, MOCVD, and epitaxy.
LED Manufacturing: Widely used as robust and reliable wafer holders for ICP etching processes in the production of Light-Emitting Diodes.
Advanced Coatings & Components: Suitable for various industrial applications requiring high thermal and chemical stability.
We supply a comprehensive range of standard and custom-sized Silicon Carbide trays, plates, and other specialized SiC components to meet the precise needs of the semiconductor and LED industries.
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| Silicon Carbide (SiC) Trays & Plates: High-Performance Wafer Holders for ICP Etching in LED Manufacturing Images | 
 Sintered Silicon Carbide Mechanical Seal Ring
                                                                                    
                        
                        
                        
                                                            Sintered Silicon Carbide Mechanical Seal Ring
                                                    
                        
                     High-Performance Refractory Material/Intelligent Control System for Roller
                                                                                        
                                                        
                        
                        
                        
                                                            High-Performance Refractory Material/Intelligent Control System for Roller
                                                    
                        
                     Pressureless Sintered Silicon Carbide (SSiC) Thermocouple Protection Tubes
                                                                                    
                        
                        
                        
                                                            Pressureless Sintered Silicon Carbide (SSiC) Thermocouple Protection Tubes
                                                    
                        
                     High-Purity Pressureless SiC Crucible | 1800°C Crack-Free · Fast Heat Transfer ·
                                                                                    
                        
                        
                        
                                                            High-Purity Pressureless SiC Crucible | 1800°C Crack-Free · Fast Heat Transfer ·
                                                    
                        
                     Silicon Carbide (SiC) Cylinders: High-Performance Components for Demanding
                                                                                    
                        
                        
                        
                                                            Silicon Carbide (SiC) Cylinders: High-Performance Components for Demanding
                                                    
                        
                     Silicon Carbide (SiC) Sealing Rings: Advanced Performance for Demanding
                                                                                    
                        
                        
                        
                                                            Silicon Carbide (SiC) Sealing Rings: Advanced Performance for Demanding
                                                    
                        
                     Silicon Carbide (SiC) Sandblasting Nozzles: Superior Wear Resistance for
                                                                                    
                        
                        
                        
                                                            Silicon Carbide (SiC) Sandblasting Nozzles: Superior Wear Resistance for
                                                    
                        
                     Customized Sic Protection Sleeve 800mm Length 500mm Width
                                                                                        
                                                        
                        
                        
                        
                                                            Customized Sic Protection Sleeve 800mm Length 500mm Width
                                                    
                        
                     Silicon Carbide (SiC) Heat Exchanger Blocks: Advanced Cross-Bore Heat Transfer
                                                                                    
                        
                        
                        
                                                            Silicon Carbide (SiC) Heat Exchanger Blocks: Advanced Cross-Bore Heat Transfer
                                                    
                        
                     High-Temperature Resistant SiC Forks: Precision Core Components for Semiconducto
                                                                                    
                        
                        
                        
                                                            High-Temperature Resistant SiC Forks: Precision Core Components for Semiconducto