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Silicon Carbide (SiC) Trays & Plates: High-Performance Wafer Holders for ICP Etching in LED Manufacturing

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Silicon Carbide (SiC) Trays & Plates: High-Performance Wafer Holders for ICP Etching in LED Manufacturing

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Brand Name : KeGu

Place of Origin : China

Payment Terms : L/C,D/A,D/P,T/T,Western Union,MoneyGram

Supply Ability : 2,000 pcs/month

Packaging Details : Strong wooden box for Global shipping

Model Number : Customizable

Price : 200-500 yuan/kg

Material : SiC

Composition:SiC : >98%

Color : Black

Density : >3.05g/cm3

Max. Service Temp : 1650°C

Flexural Strength : 380MPa

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Overview:

Silicon Carbide (SiC) trays and plates are precision-engineered wafer carriers designed specifically for Inductively Coupled Plasma (ICP) etching processes within the LED industry. SiC stands out as a superior material due to its exceptional thermal management, outstanding corrosion resistance, and remarkable mechanical stability at extreme temperatures. These properties make our SiC trays the ideal solution for demanding semiconductor applications, ensuring process integrity and high yield.

Key Material Advantages:

  • Superior Thermal Conductivity: For efficient heat dissipation and uniform temperature distribution across the wafer.

  • Exceptional Plasma & Corrosion Resistance: Withstands harsh chemical environments and plasma shock for extended service life.

  • High Mechanical Strength at Elevated Temperatures: Maintains structural integrity and dimensional stability under high thermal loads.

  • Low Thermal Expansion: Minimizes the risk of warping or stress on wafers during thermal cycling.

Silicon Carbide (SiC) Material Properties

Property Value
Compound Formula SiC
Molecular Weight 40.1
Appearance Black
Melting Point 2,730 °C (decomposes)
Density 3.0 - 3.2 g/cm³
Electrical Resistivity 1 - 4 x 10¹ Ω·m
Poisson’s Ratio 0.15 - 0.21
Specific Heat 670 - 1180 J/kg·K


Comparative Specifications: SiC Tray Types


Type

Recrystallized SiC

Sintered SiC

Reaction Bonded SiC

Purity

> 99.5%

> 98%

> 88%

Max. Working Temp.

1650 °C

1550 °C

1300 °C

Bulk Density (g/cm³)

2.7

3.1

> 3.0

Apparent Porosity

< 15%

< 2.5%

< 0.1%

Flexural Strength (MPa)

110

400

380

Compressive Strength (MPa)

> 300

2200

2100

Thermal Expansion (10⁻⁶/°C)

4.6 (at 1200°C)

4.0 (at <500°C)

4.4 (at <500°C)

Thermal Conductivity (W/m·K)

35 - 36

110

65

Primary Characteristics

High-Temperature Resistance, High Purity

High Fracture Toughness

Excellent Chemical Resistance

Critical Features for ICP Etching:

  • Excellent Thermal Conductivity: Ensures rapid heat transfer and minimizes thermal gradients.

  • Superior Resistance to Plasma Shock: Guarantees long-term durability and process consistency.

  • Excellent Temperature Uniformity: Critical for achieving uniform etch rates and high device performance across the entire wafer.

Primary Applications:

  • Semiconductor Processing: Ideal as wafer carriers, susceptors, and process fixtures in CVD, MOCVD, and epitaxy.

  • LED Manufacturing: Widely used as robust and reliable wafer holders for ICP etching processes in the production of Light-Emitting Diodes.

  • Advanced Coatings & Components: Suitable for various industrial applications requiring high thermal and chemical stability.

We supply a comprehensive range of standard and custom-sized Silicon Carbide trays, plates, and other specialized SiC components to meet the precise needs of the semiconductor and LED industries.




Product Tags:

Icp Etching Wafer Holder Sic Plate

      

Wafer Holder Silicon Carbide Plate

      

Led Industry Sic Plate

      
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